Electron-hole liquids in transition-metal oxide heterostructures

Band offsets in transition-metal oxide heterostructures

We measured valence band offsets in Ta2O5–WO3, Ta2O5–Nb2O5 and WO3–Nb2O5 heterostructure couples by in situ x-ray photoelectron spectroscopy, immediately following the bi-layer growth in ultra-high vacuum. Conduction band offsets were estimated using the measured valence band offsets in conjunction with the literature values for the respective band gaps. The offsets between Ta2O5 and WO3 and be...

Hot electron transport in a strongly correlated transition-metal oxide

Oxide heterointerfaces are ideal for investigating strong correlation effects to electron transport, relevant for oxide-electronics. Using hot-electrons, we probe electron transport perpendicular to the La₀.₇Sr₀.₃MnO₃ (LSMO)- Nb-doped SrTiO₃ (Nb:STO) interface and find the characteristic hot-electron attenuation length in LSMO to be 1.48 ± 0.10 unit cells (u.c.) at -1.9 V, increasing to 2.02 ± ...

Stoichiometry-driven metal-to-insulator transition in NdTiO3/SrTiO3 heterostructures

Tightly Bound Trions in Transition Metal Dichalcogenide Heterostructures.

We report the observation of trions at room temperature in a van der Waals heterostructure composed of MoSe2 and WS2 monolayers. These trions are formed by excitons excited in the WS2 layer and electrons transferred from the MoSe2 layer. Recombination of trions results in a peak in the photoluminescence spectra, which is absent in monolayer WS2 that is not in contact with MoSe2. The trion origi...

Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures.

Semiconducting transition metal dichalchogenides (TMDs) are a family of van der Waals bonded materials that have recently received interest as alternative substrates to hexagonal boron nitride (hBN) for graphene, as well as for components in novel graphene-based device heterostructures. We elucidate the local structural and electronic properties of graphene on TMD heterostructures through scann...